[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA, USA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT
Vandendaele, W., Garros, X., Lorin, T., Morvan, E., Torres, A., Escoffier, R., Jaud, M A, Plissonnier, M., Gaillard, F.Year:
2018
Language:
english
DOI:
10.1109/IRPS.2018.8353580
File:
PDF, 704 KB
english, 2018