Ka-band MMIC using AlGaN/GaN-on-Si with recessed high-k...

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IEEE Electron Device Letters 2018

Ka-band MMIC using AlGaN/GaN-on-Si with recessed high-k dual MIS structure

Kim, Dong-Hwan, Park, Hongjong, Eom, Su-Keun, Jeong, Jun-Seok, Cha, Ho-Young, Seo, Kwang-Seok
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2834223
File:
PDF, 741 KB
english, 2018
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