Microwave reflectivity from 4H-SiC under a high-injection...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

Kato, Masashi, Mori, Yuto, Ichimura, Masaya
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DP14
Date:
April, 2015
File:
PDF, 730 KB
english, 2015
Conversion to is in progress
Conversion to is failed