[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Engineering of ferroelectric switching speed in Si doped HfO2 for high-speed 1T-FERAM application
Yoo, H. K., Kim, J. S., Zhu, Z., Choi, Y. S., Yoon, A., MacDonald, M. R., Lei, X., Lee, T. Y., Lee, D., Chae, S. C., Park, J., Hemker, D., Langan, J. G., Nishi, Y., Hong, S. J.Year:
2017
Language:
english
DOI:
10.1109/IEDM.2017.8268424
File:
PDF, 1.03 MB
english, 2017