Suppression of the Backgating Effect of Enhancement-mode...

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IEEE Electron Device Letters 2018

Suppression of the Backgating Effect of Enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Groeseneken, Stefaan
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2833883
File:
PDF, 577 KB
english, 2018
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