[IEEE 2017 International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology (ICEEIMT) - Coimbatore (2017.2.3-2017.2.4)] 2017 International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology (ICEEIMT) - 30 nm Normally off enhancement mode AlGaN/GaN HEMT on SiC substrate for future high speed nanoscale power applications

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