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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs
Hua, Mengyuan, Wei, Jin, Bao, Qilong, He, Jiabei, Zhang, Zhaofu, Zheng, Zheyang, Lei, Jiacheng, Chen, Kevin J.Year:
2017
Language:
english
DOI:
10.1109/IEDM.2017.8268489
File:
PDF, 574 KB
english, 2017