Characterization of Interface State Density of Ni/p-GaN...

Chinese Physics Letters 2017 / 08 Vol. 34; Iss. 9

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Zhu, Zhi-Fu, Zhang, He-Qiu, Liang, Hong-Wei, Peng, Xin-Cun, Zou, Ji-Jun, Tang, Bin, Du, Guo-Tong
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Volume:
34
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/34/9/097301
Date:
August, 2017
File:
PDF, 769 KB
english, 2017
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