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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Trench schottky rectifiers with non-uniform trench depths
Mudholkar, Mihir, Quddus, Mohammed Tanvir, Kalderon, Yohai, Thomason, Mike, Salih, AliYear:
2017
Language:
english
DOI:
10.23919/ISPSD.2017.7988898
File:
PDF, 849 KB
english, 2017