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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET
Hosoi, Takuji, Azumo, Shuji, Kashiwagi, Yusaku, Hosaka, Shigetoshi, Yamamoto, Kenji, Aketa, Masatoshi, Asahara, Hirokazu, Nakamura, Takashi, Kimoto, Tsunenobu, Shimura, Takayoshi, Watanabe, HeijiYear:
2017
DOI:
10.23919/ISPSD.2017.7988906
File:
PDF, 848 KB
2017