Role of thin Ti layer in formation mechanism of low...

Semiconductor Science and Technology 2018 / 07 Vol. 33; Iss. 7

Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure

Yoshida, Takahiro, Egawa, Takashi
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Volume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aac3c3
Date:
July, 2018
File:
PDF, 894 KB
english, 2018
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