Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

IEEE Transactions on Electron Devices 2018 / 6 Vol. 65; Iss. 6

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

Sayadi, Luca, Iannaccone, Giuseppe, Sicre, Sebastien, Haberlen, Oliver, Curatola, Gilberto
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2828702
Date:
June, 2018
File:
PDF, 1.62 MB
english, 2018
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