[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - U-shaped channel SOI-LIGBT with dual trenches to improve the trade-off between saturation voltage and turn-off loss

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