Study of high breakdown voltage GaN-based current-aperture...

Semiconductor Science and Technology 2018 / 07 Vol. 33; Iss. 7

Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications

Wang, Haiyong, Mao, Wei, Cong, Guanyu, Wang, Xiaofei, Du, Ming, Zheng, Xuefeng, Wang, Chong, Zhang, Jincheng, Hao, Yue
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Volume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aac46b
Date:
July, 2018
File:
PDF, 1.94 MB
english, 2018
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