Quantitative low energy depth profiling of SiGe laterally...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2018 / 05 Vol. 36; Iss. 3

Quantitative low energy depth profiling of SiGe laterally nonuniform structures

Merkulov, Alexander, Peres, Paula, Larson, David James, Schuhmacher, Michel
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Volume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.5019652
Date:
May, 2018
File:
PDF, 563 KB
english, 2018
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