Reduction of Dislocations in GaN on Silicon Substrate Using...

physica status solidi (b) 2018 / 05 Vol. 255; Iss. 5

Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching (Phys. Status Solidi B 5/2018)

Matsumoto, Koji, Ono, Toshiaki, Honda, Yoshio, Yamamoto, Tetsuya, Usami, Shigeyoshi, Kushimoto, Maki, Murakami, Satoshi, Amano, Hiroshi
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Volume:
255
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201870120
Date:
May, 2018
File:
PDF, 2.03 MB
2018
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