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ChemInform Abstract: THE GROWTH OF HIGH QUALITY EPITAXIAL SILICON OVER ION IMPLANTED BURIED ARSENIC LAYERS
MOLINE, R. A., LIEBERMAN, R., SIMPSON, J., MAC RAE, A. U.Volume:
5
Journal:
Chemischer Informationsdienst
DOI:
10.1002/chin.197451006
Date:
December, 1974
File:
PDF, 129 KB
1974