Effective Schottky barrier height lowering technique for...

Applied Surface Science 2018 / 09 Vol. 453

Effective Schottky barrier height lowering technique for InGaAs contact scheme: D MIGS and D it reduction and interfacial dipole formation

Kim, Seung-Hwan, Kim, Gwang-Sik, Kim, Sun-Woo, Yu, Hyun-Yong
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Volume:
453
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2018.05.070
Date:
September, 2018
File:
PDF, 2.40 MB
english, 2018
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