UVA and UVB light emitting diodes with Al y...

Semiconductor Science and Technology 2018 / 07 Vol. 33; Iss. 7

UVA and UVB light emitting diodes with Al y Ga 1− y N quantum dot active regions covering the 305–335 nm range

Brault, J, Khalfioui, M Al, Matta, S, Damilano, B, Leroux, M, Chenot, S, Korytov, M, Nkeck, J E, Vennéguès, P, Duboz, J–Y, Massies, J, Gil, B
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Volume:
33
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aac3bf
Date:
July, 2018
File:
PDF, 1.16 MB
english, 2018
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