In-plane InSb nanowires grown by selective area molecular...

Nanotechnology 2018 / 07 Vol. 29; Iss. 30

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

Desplanque, L, Bucamp, A, Troadec, D, Patriarche, G, Wallart, X
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Volume:
29
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aac321
Date:
July, 2018
File:
PDF, 2.49 MB
english, 2018
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