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Electro-Physical Properties of Gate-Last Silicon MOSFETs with Low-Temperature SiO x N y /HfO x Stack After Ultra-Shallow Fluorine Implantation from RF Plasma
Mroczyński, Robert, Jasiński, JakubLanguage:
english
Journal:
physica status solidi (RRL) - Rapid Research Letters
DOI:
10.1002/pssr.201800152
Date:
May, 2018
File:
PDF, 1.13 MB
english, 2018