Low temperature cured poly-siloxane passivation for highly...

Applied Physics Letters 2018 / 05 Vol. 112; Iss. 21

Low temperature cured poly-siloxane passivation for highly reliable a -InGaZnO thin-film transistors

Yoshida, Naofumi, Bermundo, Juan Paolo, Ishikawa, Yasuaki, Nonaka, Toshiaki, Taniguchi, Katsuto, Uraoka, Yukiharu
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Volume:
112
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5029521
Date:
May, 2018
File:
PDF, 1.13 MB
english, 2018
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