Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for...

Bulletin of the Russian Academy of Sciences: Physics 2018 / 4 Vol. 82; Iss. 4

Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon

Martovitsky, V. P., Aleshchenko, Yu. A., Krivobok, V. S., Muratov, A. V., Klekovkin, A. V., Mehiya, A. B.
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Volume:
82
Language:
english
Journal:
Bulletin of the Russian Academy of Sciences: Physics
DOI:
10.3103/S1062873818040123
Date:
April, 2018
File:
PDF, 853 KB
english, 2018
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