Dose rate sensitivity of 65 nm MOSFETs exposed to ultra-high doses
Borghello, Giulio, Faccio, Federico, Lerario, Edoardo, Michelis, Stefano, Kulis, Szymon, Fleetwood, Daniel M., Schrimpf, Ronald D., Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, StefanoYear:
2018
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2018.2828142
File:
PDF, 1.23 MB
english, 2018