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Microstructure and properties of aluminum contacts formed on GaAs(100) by low pressure chemical vapor deposition with dimethylethylamine alane source
V. Shashkin, S. Rushworth, V. Danil'tsev, A. Murel, Yu. Drozdov, S. Gusev, O. Khrykin, N. VostokovVolume:
30
Year:
2001
Language:
english
Pages:
7
DOI:
10.1007/bf02657721
File:
PDF, 866 KB
english, 2001