Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS 2 flake based field effect transistors on SiO 2 and hBN substrates
Lee, Changhee, Rathi, Servin, Khan, Muhammad Atif, Lim, Dongsuk, Kim, Yunseob, Yun, Sun Jin, Youn, Doo-Hyeb, Watanabe, Kenji, Taniguchi, Takashi, Kim, Gil-HoVolume:
29
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aac6b0
Date:
August, 2018
File:
PDF, 986 KB
english, 2018