Improved quality of In 0.30 Ga 0.70 As layers grown on GaAs...

Journal of Crystal Growth 2018 / 08 Vol. 496-497

Improved quality of In 0.30 Ga 0.70 As layers grown on GaAs substrates using undulating step-graded GaInP buffers

Li, Kuilong, Wang, Wenjia
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Volume:
496-497
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2018.05.014
Date:
August, 2018
File:
PDF, 1.83 MB
english, 2018
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