Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)
Goyal, Anshu, Yadav, Brajesh S., Raman, R., Kapoor, Ashok K.Volume:
8
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5011801
Date:
February, 2018
File:
PDF, 1.91 MB
english, 2018