Evaluation of Si:HfO 2...

IEEE Journal of the Electron Devices Society 2018 Vol. 6

Evaluation of Si:HfO 2 Ferroelectric Properties in MFM and MFIS Structures

Anderson, Jackson D., Merkel, Jordan, Macmahon, David, Kurinec, Santosh K.
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Volume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2826978
File:
PDF, 2.19 MB
english, 2018
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