Characterization of interface states in AlGaN/GaN...

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Applied Surface Science 2018 / 5

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO 2 gate dielectric grown by atomic layer deposition

Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.
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Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2018.05.191
Date:
May, 2018
File:
PDF, 1.40 MB
english, 2018
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