Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO 2 multi-layer structures via high-temperature stress migration
Naoe, Takuya, Endoh, Hirohiko, Fuchino, Fumihiro, Miyata, Masanori, Miyake, Hidetsugu, Takahashi, Takuya, Fujimoto, TakaakiVolume:
83
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.04.013
Date:
August, 2018
File:
PDF, 3.18 MB
english, 2018