Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well
Seok, Ogyun, Ha, Min-Woo, Kang, In Ho, Kim, Hyoung Woo, Kim, Dong Young, Bahng, WookVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.06HC07
Date:
June, 2018
File:
PDF, 1.09 MB
english, 2018