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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity
Chen, Yi-Ting, Sarangadharan, Indu, Sukesan, Revathi, Hseih, Ching-Yen, Lee, Geng-Yen, Chyi, Jen-Inn, Wang, Yu-LinVolume:
8
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/s41598-018-26792-9
Date:
December, 2018
File:
PDF, 3.79 MB
english, 2018