Anisotropic selective etching between SiGe and Si

Japanese Journal of Applied Physics 2018 / 06 Vol. 57; Iss. 6S2

Anisotropic selective etching between SiGe and Si

Ishii, Yohei, Scott-McCabe, Ritchie, Yu, Alex, Okuma, Kazumasa, Maeda, Kenji, Sebastian, Joseph, Manos, Jim
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.06JC04
Date:
June, 2018
File:
PDF, 1001 KB
english, 2018
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