Enlarged memory margins for resistive switching devices...

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Solid-State Electronics 2018 / 6

Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Liu, Lu, Lu, Kailei, Yan, Dong, Zhang, Jiazhen, Ma, Chi, Jia, Zhengqiang, Wang, Wen, Zhao, Enming
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2018.06.003
Date:
June, 2018
File:
PDF, 1.14 MB
english, 2018
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