Erratum: Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature [Phys. Rev. Appl. 2 , 034005 (2014)]
Sasaki, Tomoyuki, Ando, Yuichiro, Kameno, Makoto, Tahara, Takayuki, Koike, Hayato, Oikawa, Tohru, Suzuki, Toshio, Shiraishi, MasashiVolume:
9
Language:
english
Journal:
Physical Review Applied
DOI:
10.1103/PhysRevApplied.9.039901
Date:
March, 2018
File:
PDF, 199 KB
english, 2018