Atomistic tight-binding study of contact resistivity in...

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IEEE Transactions on Nanotechnology 2018

Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts

Sarangapani, Prasad, Weber, Cory, Chang, Jiwon, Cea, Stephen, Povolotskyi, Michael, Klimeck, Gerhard, Kubis, Tillmann
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2018.2840836
File:
PDF, 3.59 MB
english, 2018
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