Pulsed photo-ionization spectroscopy in carbon doped MOCVD...

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Semiconductor Science and Technology 2018 / 06

Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si

Gaubas, Eugenijus, Ceponis, Tomas, Mickevicius, Juras, Pavlov, Jevgenij, Rumbauskas, Vytautas, Velicka, Martynas, Simoen, Eddy, Zhao, Ming
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aaca78
Date:
June, 2018
File:
PDF, 2.27 MB
english, 2018
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