[IEEE 2017 Silicon Nanoelectronics Workshop (SNW) - Kyoto (2017.6.4-2017.6.5)] 2017 Silicon Nanoelectronics Workshop (SNW) - A new operation scheme to obtain 3-bit capacity per cell in HfO2 based RRAM with high uniformity
Zhu, Dongbin, Ding, Xiangxiang, Huang, Peng, Zhou, Zheng, Ma, Xiaolu, Liu, Lifeng, Kang, Jinfeng, Zhang, XingYear:
2017
Language:
english
DOI:
10.23919/SNW.2017.8242308
File:
PDF, 1.33 MB
english, 2017