Characterization of Single Defects in Ultrascaled MoS 2 Field-Effect Transistors
Stampfer, Bernhard, Zhang, Feng, Illarionov, Yury Yuryevich, Knobloch, Theresia, Wu, Peng, Waltl, Michael, Grill, Alexander, Appenzeller, Joerg, Grasser, TiborLanguage:
english
Journal:
ACS Nano
DOI:
10.1021/acsnano.8b00268
Date:
June, 2018
File:
PDF, 1.56 MB
english, 2018