Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Cui, Peng, Mo, Jianghui, Fu, Chen, Lv, Yuanjie, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Dai, Gang, Lin, ZhaojunVolume:
8
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/s41598-018-27357-6
Date:
December, 2018
File:
PDF, 2.10 MB
english, 2018