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2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices
Singh, S. L, Singh, S. B, Ghatak, K. PVolume:
18
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2018.14359
Date:
April, 2018
File:
PDF, 1.35 MB
english, 2018