Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET
Mohd Razip Wee, Mohd F., Dehzangi, Arash, Bollaert, Sylvain, Wichmann, Nicolas, Majlis, Burhanuddin Y., Lisesivdin, Sefer BoraVolume:
8
Language:
english
Journal:
PLoS ONE
DOI:
10.1371/journal.pone.0082731
Date:
December, 2013
File:
PDF, 1.32 MB
english, 2013