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The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?
Mao, Ling-Feng, Ning, Huan-Sheng, Wang, Jin-Yan, Lisesivdin, Sefer BoraVolume:
10
Language:
english
Journal:
PLOS ONE
DOI:
10.1371/journal.pone.0128438
Date:
June, 2015
File:
PDF, 2.58 MB
english, 2015