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Microelectronics Reliability 2018 / 6

Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current

Chen, Kai-Huang, Cheng, Chien-Min, Li, Cheng-Ying, Huang, Shou-Jen
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.05.018
Date:
June, 2018
File:
PDF, 1.34 MB
english, 2018
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