Memory properties of (110) preferring oriented CH 3 NH 3...

Thin Solid Films 2018 / 08 Vol. 660

Memory properties of (110) preferring oriented CH 3 NH 3 PbI 3 perovskite film prepared using PbS-buffered three-step growth method

Wu, Hsuan-Ta, Chen, Yung-Fu, Shih, Chuan-Feng, Leu, Ching-Chich, Wu, Shih-Hsiung
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Volume:
660
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2018.06.032
Date:
August, 2018
File:
PDF, 2.72 MB
english, 2018
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