Extremely high characteristic temperature T0 of 0.98 µm...

Electronics Letters 1995 / 02 Vol. 31; Iss. 3

Extremely high characteristic temperature T0 of 0.98 µm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

Usami, M., Matsushima, Y., Takahashi, Y.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950137
Date:
February, 1995
File:
PDF, 227 KB
english, 1995
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