Improving Breakdown Voltage for a Novel SOI LDMOS with a...

Advances in Condensed Matter Physics 2015 Vol. 2015

Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

Jin, Jingjing, Hu, Shengdong, Chen, Yinhui, Tan, Kaizhou, Luo, Jun, Zhou, Feng, Chen, Zongze, Huang, Ye
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Volume:
2015
Year:
2015
Language:
english
Journal:
Advances in Condensed Matter Physics
DOI:
10.1155/2015/762498
File:
PDF, 2.38 MB
english, 2015
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