Nanochannel diodes based on InAs/Al 80...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2015 / 03 Vol. 33; Iss. 2

Nanochannel diodes based on InAs/Al 80 Ga 20 Sb heterostructures: Fabrication and zero-bias detector properties

Westlund, Andreas, Nilsson, Per-Åke, Sangaré, Paul, Ducournau, Guillaume, Gaquière, Christophe, Desplanque, Ludovic, Wallart, Xavier, Grahn, Jan
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Volume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4914314
Date:
March, 2015
File:
PDF, 972 KB
english, 2015
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