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All-ion-implanted planar-gate current aperture vertical Ga 2 O 3 MOSFETs with Mg-doped blocking layer
Wong, Man Hoi, Goto, Ken, Morikawa, Yoji, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, MasatakaVolume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.064102
Date:
June, 2018
File:
PDF, 2.60 MB
english, 2018